| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 14 Pin |
| Operating Voltage | 10V ~ 20V |
| Case/Package | DIP-14 |
| Rise/Fall Time | 40ns, 20ns |
| Number of Outputs | 2 Output |
| Output Voltage | 620 V |
| Output Current | 1.90 A |
| Number of Positions | 14 Position |
| Power Dissipation | 1600 mW |
| Rise Time | 60ns (Max) |
| Fall Time | 35ns (Max) |
| Fall Time (Max) | 35 ns |
| Fall Time (Max) | 60 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1600 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 20.19 mm |
| Size-Width | 7.11 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR21814PBF is a high voltage high speed power MOSFET and IGBT Driver with an independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout for both channels
● Matched propagation delay for both channels
● Logic and power ground ±5V offset
● Lower di/dt gate driver for better noise immunity
● Output source/sink current capability 1.4/1.8A
Infineon
21 Pages / 0.35 MByte
Infineon
48 Pages / 7.29 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
30 Pages / 0.41 MByte
International Rectifier
MOSFET DRIVER, HIGH/LOW SIDE, Peak Output Current:2.3A, Input Delay:180ns, Output Delay:220ns, Supply Voltage Range:10V to 20V, DIP14
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP.
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.
International Rectifier
Driver 600V 2.3A 2Out Hi/Lo Side Non-Inv 14Pin PDIP Tube
International Rectifier
Driver 600V 2.3A 2Out Hi/Lo Side Non-Inv 14Pin SOIC N T/R
International Rectifier
Driver 600V 2.3A 2Out Hi/Lo Side Non-Inv 14Pin SOIC N Tube
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP.
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.
International Rectifier
IC DRIVER HI/LO 600V 1.9A 14SOIC
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