| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 625 mW |
| Rise/Fall Time | 40ns, 20ns |
| Number of Outputs | 2 Output |
| Output Voltage | 10.20 V |
| Output Current | 1.4.2.3 A |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 625 mW |
| Quiescent Current | 240 mA |
| Rise Time | 60 ns |
| Fall Time | 35 ns |
| Fall Time (Max) | 35 ns |
| Fall Time (Max) | 60 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 625 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2181SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Tolerant to negative transient voltage DV/DT Immune
● Under-voltage lockout for both channels
● Matched propagation delay for both channels
● Lower DI/DT gate driver for better noise immunity
● Logic and power ground ±5V offset
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