| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Case/Package | DIP-8 |
| Rise/Fall Time | 40ns, 20ns |
| Number of Outputs | 2 Output |
| Output Current | 1.9 A |
| Number of Positions | 8 Position |
| Power Dissipation | 1 W |
| Rise Time | 60 ns |
| Fall Time | 35 ns |
| Fall Time (Max) | 35 ns |
| Fall Time (Max) | 60 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1000 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 10.92 mm |
| Size-Width | 7.11 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2183PBF is a high voltage high speed power MOSFET and IGBT Half-bridge Gate Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Tolerant to negative transient voltage DV/DT Immune
● Under-voltage lockout for both channels
● Matched propagation delay for both channels
● Lower DI/DT gate driver for better noise immunity
● Logic and power ground ±5V offset
Infineon
22 Pages / 0.28 MByte
Infineon
48 Pages / 7.29 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
30 Pages / 0.41 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.14 MByte
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP.
International Rectifier
High and Low Side Driver, SoftTurn-On, Low Side Inverting Input, Separate High and Low Side Input, 500ns Deadtime in a 8Pin DIP package
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP.
International Rectifier
Driver 600V 2.3A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
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