| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 45.0 A |
| Case/Package | TO-204 |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Part Family | IRF054 |
| Drain to Source Voltage (Vds) | 60.0 V |
| Continuous Drain Current (Ids) | 45.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
60V, N-CHANNEL
●The HEXFET™ technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis tance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
●Features:
●Repetitive Avalanche Ratings
●Dynamic dv/dt Rating
●Hermetically Sealed
●Simple Drive Requirements
●Ease of Paralleling
International Rectifier
7 Pages / 0.14 MByte
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