TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0085 Ω |
Polarity | N-Channel |
Power Dissipation | 140 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 84A |
Input Capacitance (Ciss) | 2810pF @25V(Vds) |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 140W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 9.65 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF1010EZSPBF is a 60V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
● Advanced process technology
● Ultra low on-resistance
● Dynamic dV/dt rating
● Repetitive avalanche allowed up to Tjmax
● 175°C Operating temperature
Infineon
12 Pages / 0.39 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
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