| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0067 Ω |
| Polarity | N-CH |
| Power Dissipation | 441 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 135 V |
| Continuous Drain Current (Ids) | 129A |
| Rise Time | 73 ns |
| Input Capacitance (Ciss) | 9700pF @50V(Vds) |
| Fall Time | 81 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 441W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Width | 4.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dV/dt and dI/dt Capability
● Lead-Free, RoHS Compliant, Halogen-Free
Infineon
12 Pages / 0.56 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
Mosfet, 135V, 129A, 8.4Mohm, 180NC Qg, D2-Pak
International Rectifier
Mosfet, 135V, 129A, 8.4Mohm, 180NC Qg, To-220ab
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