| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 162 A |
| Case/Package | TO-262-3 |
| Polarity | N-Channel |
| Power Dissipation | 3.8 W |
| Part Family | IRF1404L |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40.0 V |
| Continuous Drain Current (Ids) | 162 A |
| Rise Time | 140 ns |
| Input Capacitance (Ciss) | 7360pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Description
●Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing
●techniques to achieve extremely low on-resistance per silicon area.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
International Rectifier
11 Pages / 0.26 MByte
International Rectifier
Trans MOSFET N-CH 40V 202A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=40V, Rds(on)=0.004Ω, Id=162A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0035Ω; ID 202A; TO-220AB; PD 333W; VGS +/-20
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 2.7Milliohms; ID 190A; TO-220AB; PD 220W; -55de
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