| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 220 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0037 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 190A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 4340pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 58 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 220000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF1404ZSPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
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International Rectifier
Trans MOSFET N-CH 40V 202A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=40V, Rds(on)=0.004Ω, Id=162A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0035Ω; ID 202A; TO-220AB; PD 333W; VGS +/-20
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 2.7Milliohms; ID 190A; TO-220AB; PD 220W; -55de
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