| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 3.7 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 220 W |
| Part Family | IRF1404ZS |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 190 A |
| Input Capacitance (Ciss) | 4340pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ |
Description
●Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area.
●Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
International Rectifier
12 Pages / 0.29 MByte
International Rectifier
1 Pages / 0.11 MByte
International Rectifier
Trans MOSFET N-CH 40V 202A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=40V, Rds(on)=0.004Ω, Id=162A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0035Ω; ID 202A; TO-220AB; PD 333W; VGS +/-20
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 2.7Milliohms; ID 190A; TO-220AB; PD 220W; -55de
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