| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0053 Ω |
| Polarity | N-CH |
| Power Dissipation | 330 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 5480 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 169A |
| Rise Time | 190 ns |
| Input Capacitance (Ciss) | 5480pF @25V(Vds) |
| Input Power (Max) | 330 W |
| Fall Time | 110 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 330W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF1405PBF is a 55V N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. Suitable for anti-lock braking system, electric power steering, wiper control and climate control applications.
● 175°C Operating temperature
● Repetitive avalanche allowed up to Tjmax
● Dynamic dV/dt rating
Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
New Jersey Semiconductor
Trans MOSFET N-CH 55V 131A 3-Pin(3+Tab) TO-262
IRF
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 4.6Milliohms; ID 169A; TO-220AB; PD 330W; -55de
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
