TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Power Rating | 200 W |
Drain to Source Resistance (on) (Rds) | 0.0053 Ω |
Polarity | N-Channel |
Power Dissipation | 200 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 131A |
Rise Time | 190 ns |
Input Capacitance (Ciss) | 5480pF @25V(Vds) |
Input Power (Max) | 200 W |
Fall Time | 110 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 200W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 9.65 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
11 Pages / 0.3 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
New Jersey Semiconductor
Trans MOSFET N-CH 55V 131A 3-Pin(3+Tab) TO-262
IRF
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 4.6Milliohms; ID 169A; TO-220AB; PD 330W; -55de
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.