| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 230 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0049 Ω |
| Polarity | N-Channel |
| Power Dissipation | 230 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 150A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 4780pF @25V(Vds) |
| Input Power (Max) | 230 W |
| Fall Time | 82 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 230W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF1405ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.38 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.05 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
New Jersey Semiconductor
Trans MOSFET N-CH 55V 131A 3-Pin(3+Tab) TO-262
IRF
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 4.6Milliohms; ID 169A; TO-220AB; PD 330W; -55de
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
