| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 230 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0037 Ω |
| Polarity | N-Channel |
| Power Dissipation | 230 W |
| Part Family | IRF1405ZS |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 75.0 A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 4780pF @25V(Vds) |
| Fall Time | 82 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 230000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fast Switching
● 175°C Operating Temperature
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55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
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MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 4.6Milliohms; ID 169A; TO-220AB; PD 330W; -55de
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