TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 75.0 V |
Current Rating | 130 A |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 0.0078 Ω |
Polarity | N-Channel |
Power Dissipation | 330 W |
Part Family | IRF1407 |
Threshold Voltage | 4 V |
Input Capacitance | 5600pF @25V |
Drain to Source Voltage (Vds) | 75 V |
Breakdown Voltage (Drain to Source) | 75 V |
Continuous Drain Current (Ids) | 130 A |
Rise Time | 150 ns |
Input Capacitance (Ciss) | 5600pF @25V(Vds) |
Input Power (Max) | 330 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Size-Length | 10.67 mm |
Size-Width | 4.4 mm |
Size-Height | 16.51 mm |
Operating Temperature | -55℃ ~ 175℃ |
Specifically designed for Automotive applications, ID = 75A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features:
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tj Max.
● Lead-Free
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