| TYPE | DESCRIPTION |
|---|
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Part Family | IRF2204 |
| Breakdown Voltage (Drain to Source) | 40.0 V |
| Continuous Drain Current (Ids) | 210 A |
Description
●Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
●Typical Applications
● Electric Power Steering
● 14 Volts Automotive Electrical Systems
International Rectifier
9 Pages / 0.12 MByte
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