| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 170 A |
| Case/Package | TO-262-3 |
| Power Rating | 200 W |
| Polarity | N-Channel |
| Part Family | IRF2204L |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 170 A |
| Rise Time | 140 ns |
| Input Capacitance (Ciss) | 5890pF @25V(Vds) |
| Input Power (Max) | 200 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
| Packaging | Tube |
Description
●This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
●Features
●• Advanced Process Technology
●• Ultra Low On-Resistance
●• Dynamic dv/dt Rating
●• 175°C Operating Temperature
●• Fast Switching
●• Repetitive Avalanche Allowed up to Tjmax
●• Lead-Free
●Typical Applications
●• Industrial Motor Drive
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