| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 75.0 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 2.3 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Part Family | IRF2804 |
| Input Capacitance | 6450pF @25V |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Continuous Drain Current (Ids) | 270 A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 6450pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 130 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 330000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.4 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features:
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed Up to Tj Max.
● Lead-Free
International Rectifier
12 Pages / 0.4 MByte
International Rectifier
13 Pages / 0.4 MByte
International Rectifier
20 Pages / 0.94 MByte
International Rectifier
MOSFET N-CH 40V 75A TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 1.8Milliohms; ID 280A; TO-220AB; PD 330W; -55de
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