| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | TO-263-7 |
| Power Rating | 330 W |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.0016 Ω |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 320A |
| Rise Time | 150 ns |
| Input Capacitance (Ciss) | 6930pF @25V(Vds) |
| Input Power (Max) | 330 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 330W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Rail, Tube |
| Size-Height | 4.55 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF2804S-7PPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
10 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
MOSFET, N Ch., 40V, 320A, 1.6MOHM, 170NC QG, D2-PAK 7Pin, Pb-Free
International Rectifier
MOSFET N-CH 40V 160A D2PAK7
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