| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-220 |
| Forward Voltage | 1.30 V |
| Drain to Source Resistance (on) (Rds) | 3.90 mΩ |
| Power Dissipation | 330 W |
| Part Family | IRF2805 |
| Rise Time | 120 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Description
●Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
●Features
●Advanced Process Technology
●Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Typical Applications
●Climate Control, ABS, Electronic Braking, Windshield Wipers
International Rectifier
9 Pages / 0.14 MByte
International Rectifier
12 Pages / 0.22 MByte
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