| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-262-3 |
| Polarity | N-CH |
| Power Dissipation | 200 W |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 135A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 5110pF @25V(Vds) |
| Fall Time | 110 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Size-Length | 10.2 mm |
| Size-Width | 4.5 mm |
| Size-Height | 9.45 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 55V 135A (Tc) 200W (Tc) Through Hole TO-262
Infineon
11 Pages / 0.32 MByte
Infineon
12 Pages / 0.22 MByte
Infineon
1 Pages / 0.12 MByte
International Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 3.9Milliohms; ID 175A; TO-220AB; PD 330W; -55de
International Rectifier
IRF2805 Series 55V 4.7Ω Through Hole N-Channel Power Mosfet - TO-262-3
International Rectifier
Trans MOSFET N-CH 55V 135A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 55V 135A 3Pin(3+Tab) TO-262
International Rectifier
Trans MOSFET N-CH 55V 135A 3Pin(2+Tab) D2PAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
