| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 75.0 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 4.7 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Part Family | IRF2805 |
| Input Capacitance | 5110pF @25V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 75.0 A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 5110pF @25V(Vds) |
| Input Power (Max) | 330 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.67 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET 60A to 79A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
10 Pages / 0.15 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 3.9Milliohms; ID 175A; TO-220AB; PD 330W; -55de
International Rectifier
IRF2805 Series 55V 4.7Ω Through Hole N-Channel Power Mosfet - TO-262-3
International Rectifier
Trans MOSFET N-CH 55V 135A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 55V 135A 3Pin(3+Tab) TO-262
International Rectifier
Trans MOSFET N-CH 55V 135A 3Pin(2+Tab) D2PAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
