| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 135 A |
| Case/Package | TO-263-3 |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Part Family | IRF2805S |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 135 A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 5110pF @25V(Vds) |
| Input Power (Max) | 200 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
Description
●Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features
●Advanced Process Technology
●Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Typical Applications
●Climate Control
●ABS
●Electronic Braking
●Windshield Wipers
●Lead-Free
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