TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Power Rating | 200 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.013 Ω |
Polarity | N-Channel |
Power Dissipation | 200 W |
Threshold Voltage | 4 V |
Input Capacitance | 3820 pF |
Drain to Source Voltage (Vds) | 75 V |
Continuous Drain Current (Ids) | 82A |
Rise Time | 64 ns |
Input Capacitance (Ciss) | 3820pF @25V(Vds) |
Input Power (Max) | 230 W |
Fall Time | 48 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 230W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.5 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
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International Rectifier
Trans MOSFET N-CH 80V 82A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=75V, Id=82A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 13 Milliohms; ID 82A; TO-220AB; PD 230W; gFS 38S
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