| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Voltage Rating (DC) | 75.0 V |
| Current Rating | 160 A |
| Case/Package | TO-263-7 |
| Drain to Source Resistance (on) (Rds) | 3.8 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Part Family | IRF2907ZS-7P |
| Threshold Voltage | 4 V |
| Input Capacitance | 7580pF @25V |
| Drain to Source Voltage (Vds) | 75 V |
| Breakdown Voltage (Drain to Source) | 75 V |
| Continuous Drain Current (Ids) | 160 A |
| Rise Time | 90.0 ns |
| Input Capacitance (Ciss) | 7580pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.35 mm |
| Size-Height | 4.55 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET over 100A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
10 Pages / 0.28 MByte
International Rectifier
1 Pages / 0.42 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 3 Milliohms; ID 160A; D2Pak; PD 300W; VGS +/-20V
International Rectifier
MOSFET N-CH 75V 160A D2PAK7
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