TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | TO-247 |
Power Dissipation | 313 W |
Rise Time | 43 ns |
Input Capacitance (Ciss) | 4893pF @50V(Vds) |
Fall Time | 28 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 313000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 300 V 50A (Tc) 313W (Tc) Through Hole PG-TO247-3
Infineon
17 Pages / 1 MByte
Infineon
12 Pages / 0.23 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
Power Field-Effect Transistor, 75A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
ETC
(IRF150 - IRF500) 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
Rhopoint
Irn, Uln, Irf, Ulf Slim Profile Wire Wound, Metal Clad Resistors
Infineon
Trans MOSFET N-CH 300V 75A Tube
International Rectifier
Single N-Channel 75V 12.6mOhm 130NC HEXFET Power Mosfet SMT - TO-220AB
Infineon
Trans MOSFET N-CH 300V 50A Tube
International Rectifier
MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89NC
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.