| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 75.0 A |
| Case/Package | TO-263-3 |
| Power Rating | 170 W |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Part Family | IRF3205ZS |
| Input Capacitance | 3.45 nF |
| Gate Charge | 110 nC |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 75.0 A |
| Rise Time | 95.0 ns |
| Input Capacitance (Ciss) | 3450pF @25V(Vds) |
| Input Power (Max) | 170 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
VDSS= 55V
●RDS(on)= 6.5mΩ
●ID= 75A
●Description
●Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features
●Advanced Process Technology
●Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Lead-Free
International Rectifier
12 Pages / 0.39 MByte
International Rectifier
13 Pages / 0.29 MByte
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin (3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin(2+Tab) D2PAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
