| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 94 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.07 Ω |
| Polarity | N-Channel |
| Power Dissipation | 94 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1300 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Continuous Drain Current (Ids) | 23A |
| Rise Time | 32 ns |
| Thermal Resistance | 1.6℃/W (RθJC) |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Input Power (Max) | 94 W |
| Fall Time | 38 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 94W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF3315PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
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