| TYPE | DESCRIPTION |
|---|
| Number of Pins | 2 Pin |
| Case/Package | TO-204 |
| Drain to Source Resistance (on) (Rds) | 0.55 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Part Family | IRF340 |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 400 V |
| Breakdown Voltage (Drain to Source) | 400 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Weight | 12.0 g |
The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
●Features:
●Repetitive Avalanche Ratings
●Dynamic dv/dt Rating
●Hermetically Sealed
●Simple Drive Requirements
●Ease of Paralleling
International Rectifier
7 Pages / 0.14 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
