| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 150 V |
| Case/Package | TO-263-3 |
| Polarity | N-Channel |
| Power Dissipation | 3.8 W |
| Part Family | IRF3415S |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 43.0 A |
| Rise Time | 55 ns |
| Input Capacitance (Ciss) | 2400pF @25V(Vds) |
| Fall Time | 69 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 150V 43A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
Infineon
11 Pages / 1.04 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
New Jersey Semiconductor
Trans MOSFET N-CH 150V 43A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=150V, Rds(on)=0.042Ω, Id=43A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.042Ω; ID 43A; TO-220AB; PD 200W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.042Ω; ID 43A; D2Pak; PD 200W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 150V 43A 3Pin(2+Tab) D2PAK T/R
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