TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0095 Ω |
Polarity | N-CH |
Power Dissipation | 57 W |
Threshold Voltage | 1.8 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 59A |
Input Capacitance (Ciss) | 1210pF @15V(Vds) |
Operating Temperature (Max) | 175 ℃ |
Power Dissipation (Max) | 57W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Size-Length | 10 mm |
Size-Width | 4.4 mm |
Size-Height | 15.65 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF3707ZPBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters for computer processor power.
● Ultra-low gate impedance
● Low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Infineon
12 Pages / 0.36 MByte
Infineon
20 Pages / 2.6 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
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