| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-262-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 10.5 mΩ |
| Polarity | N-CH |
| Power Dissipation | 120 W |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 90A |
| Rise Time | 171 ns |
| Input Capacitance (Ciss) | 2672pF @16V(Vds) |
| Fall Time | 9.2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 10.2 mm |
| Size-Width | 4.5 mm |
| Size-Height | 9.45 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 30V 90A (Tc) 3.1W (Ta), 120W (Tc) Through Hole TO-262
Infineon
12 Pages / 0.22 MByte
Infineon
13 Pages / 0.22 MByte
International Rectifier
MOSFET N-CH 30V 90A TO-220AB
IRF
Power MOSFET(Vdss=30V, Rds(on)max=9mohm, Id=90A)
International Rectifier
Trans MOSFET N-CH 30V 90A 3Pin(2+Tab) D2PAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 6.4Milliohms; ID 90A; D2Pak; PD 120W; VGS +/-20
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
