| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 120 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.009 Ω |
| Polarity | N-Channel |
| Power Dissipation | 120 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 90A |
| Rise Time | 171 ns |
| Input Capacitance (Ciss) | 2672pF @16V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 9.2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 4.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF3709PBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency isolated DC-to-DC converters with synchronous rectification for telecom use and high frequency buck converters for server processor power synchronous FET. It is also optimized for synchronous buck converters including capacitive induced turn-ON immunity.
● Ultra-low gate impedance
● Low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Infineon
12 Pages / 0.22 MByte
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270 Pages / 11.59 MByte
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27 Pages / 0.3 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.04 MByte
International Rectifier
MOSFET N-CH 30V 90A TO-220AB
IRF
Power MOSFET(Vdss=30V, Rds(on)max=9mohm, Id=90A)
International Rectifier
Trans MOSFET N-CH 30V 90A 3Pin(2+Tab) D2PAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 6.4Milliohms; ID 90A; D2Pak; PD 120W; VGS +/-20
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