| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 79 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0063 Ω |
| Polarity | N-CH |
| Power Dissipation | 79 mW |
| Threshold Voltage | 2.25 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 87A |
| Rise Time | 41 ns |
| Input Capacitance (Ciss) | 2130pF @15V(Vds) |
| Fall Time | 4.7 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 79000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF3709ZSPBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters.
● Low gate charge
● Low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Infineon
13 Pages / 0.36 MByte
Infineon
12 Pages / 0.35 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
MOSFET N-CH 30V 90A TO-220AB
IRF
Power MOSFET(Vdss=30V, Rds(on)max=9mohm, Id=90A)
International Rectifier
Trans MOSFET N-CH 30V 90A 3Pin(2+Tab) D2PAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 6.4Milliohms; ID 90A; D2Pak; PD 120W; VGS +/-20
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