| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 120 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.006 Ω |
| Polarity | N-Channel |
| Power Dissipation | 120 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Continuous Drain Current (Ids) | 110A |
| Rise Time | 220 ns |
| Input Capacitance (Ciss) | 2980pF @10V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF3711PBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency isolated DC-to-DC converters with synchronous rectification for telecom use and high frequency buck converters for server processor power synchronous FET. It is also optimized for synchronous buck converters including capacitive induced turn-ON immunity.
● Ultra-low gate impedance
● Low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
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