| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 20.0 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 5.7 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Part Family | IRF3717 |
| Threshold Voltage | 2 V |
| Input Capacitance | 2890pF @10V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 14.0 ns |
| Input Capacitance (Ciss) | 2890pF @10V(Vds) |
| Input Power (Max) | 2.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●N-Channel Power MOSFET 20A to 29A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
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