| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 130 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0033 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 210A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 7960pF @25V(Vds) |
| Fall Time | 78 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 13.08 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fast Switching
● 175°C Operating Temperature
Infineon
12 Pages / 0.37 MByte
Infineon
270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
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Trans MOSFET N-CH 55V 210A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 2.6Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20
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