| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 3.3 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Part Family | IRF3805S |
| Input Capacitance | 7960pF @25V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 75.0 A |
| Input Capacitance (Ciss) | 7960pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.67 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ |
Specifically designed for Automotive applications, ID = 75 A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive
●avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety
●of other applications.
●Features
●:
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed Up to Tj Max.
● Lead-Free
International Rectifier
12 Pages / 0.37 MByte
International Rectifier
MOSFET N-CH 55V 75A TO-220AB
International Rectifier
Trans MOSFET N-CH 55V 210A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 2.6Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20
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