| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 330 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.007 Ω |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 5310pF @25V |
| Drain to Source Voltage (Vds) | 75 V |
| Breakdown Voltage (Drain to Source) | 75 V |
| Continuous Drain Current (Ids) | 140A |
| Rise Time | 140 ns |
| Input Capacitance (Ciss) | 5310pF @25V(Vds) |
| Input Power (Max) | 330 W |
| Fall Time | 120 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 330W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF3808PBF is a HEXFET® single N-channel advanced planar stripe Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. It features 175°C junction operating temperature, low junction-to-case, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications.
● Advanced process technology
● Dynamic dV/dt rating
● Repetitive avalanche allowed up to Tjmax
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International Rectifier
HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007Ω, ID = 140A
IRF
Power MOSFET(Vdss=75V, Rds(on)=0.007Ω, Id=140A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5.9Milliohms; ID 140A; TO-220AB; PD 330W; -55de
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5.9Milliohms; ID 106A; D2Pak; PD 200W; VGS +/-2
International Rectifier
Trans MOSFET N-CH 75V 106A 3Pin(2+Tab) D2PAK T/R
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