TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 200 W |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 7 mΩ |
Polarity | N-CH |
Power Dissipation | 200 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 75 V |
Breakdown Voltage (Drain to Source) | 75 V |
Continuous Drain Current (Ids) | 106A |
Rise Time | 140 ns |
Input Capacitance (Ciss) | 5310pF @25V(Vds) |
Fall Time | 120 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 200W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.5 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
12 Pages / 0.25 MByte
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30 Pages / 0.64 MByte
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International Rectifier
HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007Ω, ID = 140A
IRF
Power MOSFET(Vdss=75V, Rds(on)=0.007Ω, Id=140A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5.9Milliohms; ID 140A; TO-220AB; PD 330W; -55de
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5.9Milliohms; ID 106A; D2Pak; PD 200W; VGS +/-2
International Rectifier
Trans MOSFET N-CH 75V 106A 3Pin(2+Tab) D2PAK T/R
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