TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-262-3 |
Number of Channels | 1 Channel |
Polarity | P-Channel |
Power Dissipation | 170 W |
Part Family | IRF4905L |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | -55.0 V |
Continuous Drain Current (Ids) | -74.0 A |
Rise Time | 99 ns |
Input Capacitance (Ciss) | 3500pF @25V(Vds) |
Input Power (Max) | 170 W |
Fall Time | 96 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3800 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
VDSS = -55V
●RDS(on) = 20mΩ
●ID = -42A
●Description
●Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
●Advanced Process Technology
●Ultra Low On-Resistance
●150°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Some Parameters Are Differrent from IRF4905S
●Lead-Free
●Features
International Rectifier
11 Pages / 0.16 MByte
International Rectifier
13 Pages / 0.35 MByte
International Rectifier
6 Pages / 1.89 MByte
International Rectifier
Trans MOSFET P-CH 55V 74A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.02Ω, Id=-74A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; TO-220AB; PD 200W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; D2Pak; PD 200W; VGS +/-20V
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