TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-262-3 |
Power Rating | 200 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.02 Ω |
Polarity | P-Channel |
Power Dissipation | 200 W |
Threshold Voltage | 4 V |
Input Capacitance | 3500 pF |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 70A |
Rise Time | 99 ns |
Input Capacitance (Ciss) | 3500pF @25V(Vds) |
Input Power (Max) | 170 W |
Fall Time | 64 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 170W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.2 mm |
Size-Width | 4.5 mm |
Size-Height | 10.54 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF4905LPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
● Advanced process technology
● Fully avalanche rated
● 175°C Operating temperature
Infineon
12 Pages / 0.35 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
International Rectifier
Trans MOSFET P-CH 55V 74A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.02Ω, Id=-74A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; TO-220AB; PD 200W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; D2Pak; PD 200W; VGS +/-20V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.