| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -74.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.02 Ω |
| Polarity | P-Channel |
| Power Dissipation | 200 W |
| Part Family | IRF4905 |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | -55.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | -74.0 A |
| Rise Time | 99 ns |
| Input Capacitance (Ciss) | 3400pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 96 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.54 mm |
| Size-Height | 15.24 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●P-Channel Power MOSFET over 8A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
9 Pages / 0.17 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
5 Pages / 0.04 MByte
International Rectifier
Trans MOSFET P-CH 55V 74A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.02Ω, Id=-74A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; TO-220AB; PD 200W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; D2Pak; PD 200W; VGS +/-20V
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