| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.02 Ω |
| Polarity | P-Channel |
| Power Dissipation | 170 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 3500pF @25V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | -74.0 A |
| Input Capacitance (Ciss) | 3500pF @25V(Vds) |
| Input Power (Max) | 170 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●HEXFET® P-Channel Power MOSFETs, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
12 Pages / 0.35 MByte
International Rectifier
13 Pages / 0.35 MByte
International Rectifier
12 Pages / 0.68 MByte
International Rectifier
9 Pages / 0.14 MByte
International Rectifier
Trans MOSFET P-CH 55V 74A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.02Ω, Id=-74A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; TO-220AB; PD 200W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; D2Pak; PD 200W; VGS +/-20V
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