| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.02 Ω |
| Polarity | P-Channel |
| Power Dissipation | 170 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 3500 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 74A |
| Rise Time | 99 ns |
| Input Capacitance (Ciss) | 3500pF @25V(Vds) |
| Fall Time | 64 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 170W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF4905STRRPBF is a HEXFET® single P-channel Power MOSFET offers fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
● Advanced process technology
● Ultra-low ON-resistance
● Repetitive avalanche allowed up to Tjmax
● Dynamic dV/dt rating
● Low static drain-to-source ON-resistance
Infineon
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270 Pages / 11.59 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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9 Pages / 0.14 MByte
International Rectifier
Trans MOSFET P-CH 55V 74A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.02Ω, Id=-74A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; TO-220AB; PD 200W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.02Ω; ID -74A; D2Pak; PD 200W; VGS +/-20V
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