| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Power Dissipation | 43W (Tc) |
| Drain to Source Voltage (Vds) | 100 V |
| Input Capacitance (Ciss) | 180pF @25V(Vds) |
| Power Dissipation (Max) | 43W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
●Vishay IRF Series Power MOSFETs
●Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
●Features:
● Fast Switching
● P-Channel
● Dynamic dV/dt Rating
● Compliant to RoHS Directive 2002/95/EC
● Ease of Paralleling
Vishay Siliconix
8 Pages / 0.27 MByte
Vishay Siliconix
9 Pages / 0.14 MByte
Vishay Siliconix
9 Pages / 0.22 MByte
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