TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 400 mΩ |
Polarity | N-Channel |
Power Dissipation | 33 W |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 40.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 5.60 A |
Rise Time | 14 ns |
Fall Time | 18 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.7 mm |
Size-Height | 16.3 mm |
FEATURES
●• Avalanche Rugged Technology
●• Rugged Gate Oxide Technology
●• Lower Input Capacitance
●• Improved Gate Charge
●• Extended Safe Operating Area
●• 175°C Operating Temperature
●• Lower Leakage Current : 10 μA (Max.) @ VDS= 100V
●• Lower RDS(ON) : 0.289 Ω(Typ.)
Fairchild
7 Pages / 0.24 MByte
Fairchild
8 Pages / 0.27 MByte
VISHAY
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54Ω, ID = 5.6A
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO-220AB
Fairchild
Trans MOSFET N-CH 100V 5.6A 3Pin (3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
VISHAY
TO-220-3 N-CH 100V 5.6A 540mΩ
VISHAY
TO-252-3 N-CH 100V 5.6A 540mΩ
International Rectifier
Transistor MOSFET N Channel 100V 5.6A 3Pin 3+ Tab TO-220AB
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 5.6A; TO-220AB; PD 43W; VGS +/-20V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.