| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 5.60 A |
| Case/Package | TO-220 |
| Power Rating | 43 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.54 Ω |
| Polarity | N-Channel |
| Power Dissipation | 43 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 180pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 5.60 A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 180pF @25V(Vds) |
| Fall Time | 9.4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 43 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.
● Dynamic dV/dt Rating
● Repetitive Avalanche Rated
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements
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