TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.54 Ω |
Polarity | N-Channel |
Power Dissipation | 43 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 5.60 A |
Input Capacitance (Ciss) | 180pF @25V(Vds) |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.7 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Height | 4.83 mm |
The IRF510SPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● -55 to 175°C Operating temperature range
● Ease of paralleling
● Surface-mount
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