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IRF510SPBF
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IRF510SPBF Datasheet PDF - Vishay Siliconix

Manufacturer:Vishay Siliconix
Category:MOSFETs
Case Package:TO-263-3
Description:Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
Documentation:IRF510SPBF Datasheet (8 Pages)Package Outline Dimension on7 Page
Part Numbering System on1 Page
Pictures:
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IRF510SPBF Datasheet PDF (8 Pages)
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IRF510SPBF Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Case/PackageTO-263-3
Power Dissipation3700 mW
Rise Time16 ns
Input Capacitance (Ciss)180pF @25V(Vds)
Fall Time9.4 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)3.7W (Ta), 43W (Tc)
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IRF510SPBF Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusUnknown
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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IRF510SPBF Documents

IRF510SPBF Datasheet
Vishay Siliconix
8 Pages / 0.17 MByte
IRF510SPBF Other Datasheet PDF
Vishay Siliconix
10 Pages / 0.19 MByte

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