| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 9.20 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 270 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 9.20 A |
| Rise Time | 30 ns |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Width | 4.7 mm |
| Operating Temperature | -55℃ ~ 175℃ |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• 175 °C Operating Temperature
●• Fast Switching
●• Ease of Paralleling
●• Simple Drive Requirements
●• Lead (Pb)-free Available
Vishay Semiconductor
10 Pages / 0.27 MByte
Vishay Semiconductor
9 Pages / 0.26 MByte
Vishay Semiconductor
8 Pages / 0.37 MByte
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